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Ferroelectric Bubbles for Memory Applications

IP.com Disclosure Number: IPCOM000075482D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Fan, GJ: AUTHOR [+2]

Abstract

Described is a bubble-like storage device. It is based upon the formation of bubble-like domains of reversed polarization in a ferroelectric material. The domains are nucleated and subsequently manipulated and shifted. The ferroelectric material can be a mixed oxide Perovskite type structure such as; PbNbO(6), Bi(4)Ti(3)O(12), PbZrTiO(3), PbTiO(3), and KNbO(3), and others known in the art.

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Ferroelectric Bubbles for Memory Applications

Described is a bubble-like storage device. It is based upon the formation of bubble-like domains of reversed polarization in a ferroelectric material. The domains are nucleated and subsequently manipulated and shifted. The ferroelectric material can be a mixed oxide Perovskite type structure such as; PbNbO(6), Bi(4)Ti(3)O(12), PbZrTiO(3), PbTiO(3), and KNbO(3), and others known in the art.

Fig. 1 shows a typical ferroelectric shift register. Ferroelectric material 5 has metal electrodes 1-4 upon it. A field greater than the switching field, V(s), applied across any of the pairs of terminals will cause a domain of reversed polarization to nucleate under those electrodes. Such a domain is shown in Fig. 1 under the pair of electrodes 2.

Motion of the domain is achieved by applying the appropriate voltage to electrodes 3 in Fig. 2. The domain is coupled to the fringing fields from these electrodes. The voltage applied to electrodes 3 must be below the switching voltage. The coupling exerts a force on the domain and it shifts to electrode 3, as in Fig. 3. By manipulating the applied voltage of the adjacent electrode, a shift register function is achieved.

Ferroelectric bubbles do not have to be regenerated. Since ferroelectric material has storage capability, it is not necessary to have permanent electrodes on the storage medium. The chip can be interchangeable and one set of transducers can be shared among many chips.

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