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One Step Aluminum Mask Fabrication

IP.com Disclosure Number: IPCOM000075490D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Rich, DW: AUTHOR [+2]

Abstract

As a resist mask is developed upon an aluminum film the latter is etched by the resist developer solution. Besides eliminating a separate aluminum etching step of processing, with the associated advantages of economy and processing speed, this technique provides more controllable etching; the usual aluminum etching reaction being quite violent and difficult to control in ordinary etching solutions.

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One Step Aluminum Mask Fabrication

As a resist mask is developed upon an aluminum film the latter is etched by the resist developer solution. Besides eliminating a separate aluminum etching step of processing, with the associated advantages of economy and processing speed, this technique provides more controllable etching; the usual aluminum etching reaction being quite violent and difficult to control in ordinary etching solutions.

The resist used (e. g. AZ111)* preferably is one which requires an alkaline developer. A developer which provides suitable development/ etching action is AZ303.*

An incidental advantage is the maintenance of compatibility between the etchant and the resist, where ordinary etchants might subject the resist to more severe attack. Another incidental advantage is the elimination of the need for post-development processing of the resist (drying, curing, hardening, etc.).

A resist stripping solution, which may be used to remove the developed resist without attacking the aluminum, is acetone. * Products of Shipley Company, Inc.

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