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Browse Prior Art Database

Making GaAlAs Light Emitting Diodes

IP.com Disclosure Number: IPCOM000075497D
Original Publication Date: 1971-Sep-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Shang, DC: AUTHOR

Abstract

This process provides an inexpensive and simple method for making a monolithic matrix of light emitting diodes (LED). A typical example of the process is as follows: A P-type substrate 1 of GaAs, which is zinc doped, is treated with a chemical etchant, e. g. HNO(3)+HF, to eliminate oxide contaminants. Next, a silicon nitride or aluminum oxide coating is deposited by an electron-beam gun process through a suitable mask on the surface 1a. The mask is preferably configured so that the subsequently formed diodes will be arranged in a rectangular matrix on the surface 1a, c.f., for example the LED that will be subsequently formed at the region of substrate 1 between the two elements 2, shown in Fig. 1.

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Making GaAlAs Light Emitting Diodes

This process provides an inexpensive and simple method for making a monolithic matrix of light emitting diodes (LED). A typical example of the process is as follows: A P-type substrate 1 of GaAs, which is zinc doped, is treated with a chemical etchant, e. g. HNO(3)+HF, to eliminate oxide contaminants. Next, a silicon nitride or aluminum oxide coating is deposited by an electron-beam gun process through a suitable mask on the surface 1a. The mask is preferably configured so that the subsequently formed diodes will be arranged in a rectangular matrix on the surface 1a, c.f., for example the LED that will be subsequently formed at the region of substrate 1 between the two elements 2, shown in Fig. 1.

Next, gallium aluminum arsenide N-type layer 3 is epitaxially grown by a solution or vapor technique resulting in the structure of Fig. 2. The device is annealed at 900 Degrees C for approximately 30 to 60 minutes to diffuse the zinc dopant of substrate 1 into the regions of layer 3 lying between elements 2. As a result discrete PN junctions 4 are formed between the elements 2, c.f. Fig. 3. Next, the N-region associated with each PN junction 4 has an electrode 5 connected to it and common electrode 6 is connected to substrate 1. Each PN junction thus forms a discrete LED of the matrix.

When energized by a suitable energizing source through selective switching means, not shown, connected to electrodes 5 and 6, the so selected one or mo...