Browse Prior Art Database

Group III V Laser

IP.com Disclosure Number: IPCOM000075513D
Original Publication Date: 1971-Oct-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Shang, DC: AUTHOR [+2]

Abstract

A solid state laser device 10 is made of Group III and V materials. Device 10 includes an N-type substrate 11 and a P-type layer 12, which is formed on substrate 11 by a suitable epitaxial solution growth process. In addition, the melt used to form layer 12 during the process also includes a Zn dopant. With the substrate 11 immersed in the melt, the Zn is allowed to diffuse into the substrate 11 to form a P-type region 13 and resultant PN junction 14 prior to the formation of the P-type layer 12. For example, the substrate 12 is allowed to "soak" in the high-temperature melt, e. g. 980 degrees C, for approximately five to ten minutes before the melt is cooled at a controlled rate, e.g. 1 degree C per minute.

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Group III V Laser

A solid state laser device 10 is made of Group III and V materials. Device 10 includes an N-type substrate 11 and a P-type layer 12, which is formed on substrate 11 by a suitable epitaxial solution growth process. In addition, the melt used to form layer 12 during the process also includes a Zn dopant. With the substrate 11 immersed in the melt, the Zn is allowed to diffuse into the substrate 11 to form a P-type region 13 and resultant PN junction 14 prior to the formation of the P-type layer 12. For example, the substrate 12 is allowed to "soak" in the high-temperature melt, e. g. 980 degrees C, for approximately five to ten minutes before the melt is cooled at a controlled rate, e.g. 1 degree C per minute.

The layer 12 provides a barrier, which prevents the Zn from being released from the region 13 as the controlled cooling takes place during the described process.

In operation, a high-current pulse source is connected across electrodes 15 affixed to device 10 resulting in lasing action in the PN junction 14. The layer 12, because of its high index of refraction, enhances the lasing action of the junction 14 and confines the light emission along the vertical sides of the device 10 at the edges of the junction 14.

Table I gives three examples of Group III and V semiconductor materials which can be used to fabricate the laser device 10.

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