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Evaluating Insulation Layer Quality and Measuring Defect Density

IP.com Disclosure Number: IPCOM000075554D
Original Publication Date: 1971-Oct-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Gniewek, J: AUTHOR [+2]

Abstract

Present methods of determining defect densities in thin-insulating films involve laborious visual inspection and counting techniques. This description is directed to the use of an electron-beam system, which provides electronic measurement of defect density.

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Evaluating Insulation Layer Quality and Measuring Defect Density

Present methods of determining defect densities in thin-insulating films involve laborious visual inspection and counting techniques. This description is directed to the use of an electron-beam system, which provides electronic measurement of defect density.

Defects such as pinholes, cracks, and thin areas may be detected in thin- insulating films by this electron-beam system. Electron penetration depends on accelerating voltage. In regions of defects, penetration is greater.

A thin (200 Angstrom) conducting film is deposited on top of the film to be evaluated. This is connected to electrical ground and prevents surface charging. The substrate conductor below the film detects those electrons which penetrate the film. This signal is processed through a pulse discriminator and counter. Electrical pulses result in defect areas where the beam penetrates to the detector substrate. Adjustment of the beam parameters then permits rapid automatic measurement of defect density, read directly from the counter in units of number of defects/cm2. Special test structures allow evaluation of pinhole density, edge coverage, thickness variations and other similar defect concerns.

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