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Potential Well Charge Detector

IP.com Disclosure Number: IPCOM000075577D
Original Publication Date: 1971-Oct-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Stinson, WF: AUTHOR

Abstract

This is a resistor sensing technique for detecting and measuring the charge in a charge-coupled semiconductor device, by utilizing the inherent resistance of the semiconductor material.

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Potential Well Charge Detector

This is a resistor sensing technique for detecting and measuring the charge in a charge-coupled semiconductor device, by utilizing the inherent resistance of the semiconductor material.

Charge-coupled semiconductor devices utilize the mobility of charge in depletion regions created at the surface of a semiconductor body to transmit information. A semiconductor body 10 has an insulating layer 11 disposed on its surface, over which is laid a pair of electrodes 14 and 15. When properly biased, these electrodes will create, in the body, depletion regions 17 and 18. Proper control of these depletion regions can cause a charge to be transported into the body. This scheme also allows for detection of the charge during the transfer mode.

The depletion region 17 is created in the body with a known potential, whose intensity is indicated by the depth of the region 17. A charge, introduced into region 17, reduces the surface potential of region 17 to the level indicated by dashed line 19. When a voltage is applied to the metal gate 15, which is adjacent to and slightly overlapping electrode 14, a second depletion region 18 is formed, under electrode 15, which is adjacent to and merging into the region 17. If the surface potential of region 17 is lower than the potential creating region 18, then part of the charge contained in region 17 will transfer into the region 18 forming a conducting layer between the two regions 17 and 18. The resistance...