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Low Power Ion Source

IP.com Disclosure Number: IPCOM000075582D
Original Publication Date: 1971-Oct-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Penebre, NA: AUTHOR

Abstract

A low-power ion source for use in the production of semiconductor devices by ion beam implantation is shown in the Figure. The source is contained in a quartz or metal tube 1, one end of which contains an end plug 3 having an insulated feedthrough 4, to which a cup-like cathode 5 is connected by a rod 6. A steel anode 7 is supported by connections 9 and 10 to the plug 3. Connection 9 provides an electrical connection from a 3KV power source 12 to anode 7. A solenoid coil 8 encompasses the tube 1 to provide a confining magnetic field for positive plasma ions. At the other end of tube 1 a base plate 13 is mounted. Base plate 13 has a gap or aperture 15 through which positive ions are extracted by extractor 16. Base plate 13 contains a passage 17 connected to a valve 18 which in turn is connected to a gas supply 19.

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Low Power Ion Source

A low-power ion source for use in the production of semiconductor devices by ion beam implantation is shown in the Figure. The source is contained in a quartz or metal tube 1, one end of which contains an end plug 3 having an insulated feedthrough 4, to which a cup-like cathode 5 is connected by a rod 6. A steel anode 7 is supported by connections 9 and 10 to the plug 3. Connection 9 provides an electrical connection from a 3KV power source 12 to anode 7. A solenoid coil 8 encompasses the tube 1 to provide a confining magnetic field for positive plasma ions. At the other end of tube 1 a base plate 13 is mounted. Base plate 13 has a gap or aperture 15 through which positive ions are extracted by extractor 16. Base plate 13 contains a passage 17 connected to a valve 18 which in turn is connected to a gas supply 19. The source requires a low-power input for its operation of only about 50 watts.

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