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Browse Prior Art Database

Transistor Heat Sink

IP.com Disclosure Number: IPCOM000075593D
Original Publication Date: 1971-Oct-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Randolph, JB: AUTHOR

Abstract

The heat sink 10 for a transistor 12 includes fins 14 formed of sheet material and having a wave pattern molded therein for maximizing heat transfer from transistor 12, while minimizing air flow disruption in a given amount of space.

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Transistor Heat Sink

The heat sink 10 for a transistor 12 includes fins 14 formed of sheet material and having a wave pattern molded therein for maximizing heat transfer from transistor 12, while minimizing air flow disruption in a given amount of space.

Fins 14 are molded into a sheet of heat-conducting metallic alloy by the process disclosed in Fields et al U. S. patent 3,340,101; and the alloy is tin plated and is fixed to aluminum sheet substrate 16 on which transistor 12 is mounted. Fins 14 are formed with undulations 14a in a wave pattern for disrupting the boundary layer of air which moves longitudinally of fins 14. These undulations not only increase the heat transfer per unit area of fin, but also allow a greater number of fins 14 per unit area of substrate 16 while maintaining a minimum air flow impedance. This pattern also increases individual fin area. Air passes through tunnels 14b provided by the corrugated pattern of fins 14, and this pattern tends to trap the air in a forced convection and keeps it in constant and intimate contact with fins 14 and substrate 16. Flats 14c are molded with fins 14 to provide an excellent thermal contact joint between fins 14 and substrate 16. The rounded form of fins 14 adds to fin area without increasing overall sink dimensions and tends to scatter radiation heat transfer. Transistor 12 is mounted on substrate 16 in an opening which is provided by discontinuous ones of fins 14, and which is of substantially the same...