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Stacking Fault Free Epitaxial Layers

IP.com Disclosure Number: IPCOM000075684D
Original Publication Date: 1971-Oct-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Edel, WA: AUTHOR

Abstract

Stacking fault free epitaxial layers over boron doped areas may be grown by compensating the surface with a very shallow phosphorus diffusion of approximately the same surface concentration as the boron diffusion. The approximate impurity profile after the boron and phosphorus diffusion is shown in A. The phosphorus diffusion is followed by the phosphosilicate removal in hydrofluoric acid and the epitaxial growth. The epitaxial layer grown on this surface is free of stacking faults. During the rest of the epitaxial process and subsequent processing the small amount of phosphorus will redistribute to a level that will not affect any of the final device parameters as shown in B.

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Stacking Fault Free Epitaxial Layers

Stacking fault free epitaxial layers over boron doped areas may be grown by compensating the surface with a very shallow phosphorus diffusion of approximately the same surface concentration as the boron diffusion. The approximate impurity profile after the boron and phosphorus diffusion is shown in
A. The phosphorus diffusion is followed by the phosphosilicate removal in hydrofluoric acid and the epitaxial growth. The epitaxial layer grown on this surface is free of stacking faults. During the rest of the epitaxial process and subsequent processing the small amount of phosphorus will redistribute to a level that will not affect any of the final device parameters as shown in B.

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