Browse Prior Art Database

Monolithic Electric Circuit

IP.com Disclosure Number: IPCOM000075707D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Frantz, H: AUTHOR [+2]

Abstract

Transistors T1 and T2 or T3 and T4, which have their emitters connected together, can be formed in common isolation pockets 10 and 12 by diffusing a base and collector for each of the transistors into a common emitter diffusion for each set of transistors with connected emitters. The storage cell circuit shown in Fig. A contains a number of transistors with their emitters commoned together. To minimize the number of connections that have to be made between the elements of this circuit when this circuit is fabricated in monolithic form, the transistors with emitters that are connected together are formed in a common emitter pocket 10 or 12. When this is done, transistors T3 and T4 are formed in one isolation pocket 12 while transistors T1 and T2 are formed in another isolation pocket 10 along with transistor T5.

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Monolithic Electric Circuit

Transistors T1 and T2 or T3 and T4, which have their emitters connected together, can be formed in common isolation pockets 10 and 12 by diffusing a base and collector for each of the transistors into a common emitter diffusion for each set of transistors with connected emitters. The storage cell circuit shown in Fig. A contains a number of transistors with their emitters commoned together. To minimize the number of connections that have to be made between the elements of this circuit when this circuit is fabricated in monolithic form, the transistors with emitters that are connected together are formed in a common emitter pocket 10 or 12. When this is done, transistors T3 and T4 are formed in one isolation pocket 12 while transistors T1 and T2 are formed in another isolation pocket 10 along with transistor T5. The collector of resistances R1 and R2 of the flip-flop are then formed in a third isolation region 14 and the regions are interconnected by metalization 16 as illustrated.

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