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Integrated Schottky Barrier Diode Cell

IP.com Disclosure Number: IPCOM000075709D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Lane, RD: AUTHOR

Abstract

Schottky Barrier Diodes 10 and 12 are connected across the base-to-collector connections of transistors 14 and 16, to prevent the transistors from saturating when information is read from the cell.

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Integrated Schottky Barrier Diode Cell

Schottky Barrier Diodes 10 and 12 are connected across the base-to- collector connections of transistors 14 and 16, to prevent the transistors from saturating when information is read from the cell.

While this storage cell is not being addressed, the potential supplied to the storage cell is not sufficient to saturate the conducting transistor 14 or 16. However when information is read from the cell, the potential supplied to the cell is increased to provide a large output signal. This tends to drive the conducting transistor 14 or 16 into saturation, thereby increasing the recovery time of the transistor and slowing the read cycle. By the placing of Schottky barrier diodes 10 and 12 across the base-to-collector junctions of the transistors 14 and 16, the transistors are prevented from going into saturation by the diodes which conduct the overdrive currents around the base-to-emitter junctions.

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