Browse Prior Art Database

Protected Metal Mask

IP.com Disclosure Number: IPCOM000075711D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Giuffre, GJ: AUTHOR

Abstract

This mask is used for the fabrication of microminiaturized devices. Transparent substrate 10 is first coated with opaque layer 12. Substrate 10 can be a type of glass, e.g., soda-lime, borosilicate, quartz, etc., and layer 12 can be a metal such as chromium, for example. Layer 12 is then coated with transparent layer 14 consisting of a material such as SiO(2) with a thickness of approximately 500 - 1000 angstroms. Next, photoresist layer 16 is applied, exposed, and developed to provide the structure shown in drawing A. Layer 16 then acts as a mask during the etching of a pattern into layer 14, resulting in the structure of drawing B. At this point, the etching process can be continued in order to remove the exposed portions of layer 12, with a subsequent removal of the photoresist.

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Protected Metal Mask

This mask is used for the fabrication of microminiaturized devices. Transparent substrate 10 is first coated with opaque layer 12. Substrate 10 can be a type of glass, e.g., soda-lime, borosilicate, quartz, etc., and layer 12 can be a metal such as chromium, for example. Layer 12 is then coated with transparent layer 14 consisting of a material such as SiO(2) with a thickness of approximately 500 - 1000 angstroms. Next, photoresist layer 16 is applied, exposed, and developed to provide the structure shown in drawing A. Layer 16 then acts as a mask during the etching of a pattern into layer 14, resulting in the structure of drawing B. At this point, the etching process can be continued in order to remove the exposed portions of layer 12, with a subsequent removal of the photoresist. As an alternative, however, layer 16 can be removed first so that layer 14 becomes the mask during the etching of layer 12. Either alternative results in a protected optical mask as in drawing C. The etching can be performed chemically or with sputter-etching techniques.

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