Browse Prior Art Database

RF Bias Sputtering

IP.com Disclosure Number: IPCOM000075712D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+3]

Abstract

The properties of sputter deposited films can be controlled by applying a bias voltage on the substrate during RF sputtering. A single generator and matching network is used to drive both the substrate and the target.

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RF Bias Sputtering

The properties of sputter deposited films can be controlled by applying a bias voltage on the substrate during RF sputtering. A single generator and matching network is used to drive both the substrate and the target.

Components L1, C1, and C2 are used in matching networks of conventional RF sputtering systems. Variable inductor L2 is used as a variable autotransformer and, together with C3, taps power from the generator and supplies it to the substrate. Inductor L2 also inverts the polarity of the target voltage so that it is in proper phase for substrate biasing. Since the same generator and matching network are used for both the target and substrate voltages, the phase relation between them remains fixed. The substrate potential can be adjusted after the main sputtering power is set and can be varied almost independently of the target power.

If the voltage on the substrate is opposite in phase to the target voltage, the main discharge during the regular sputtering half-cycle of RF is focussed to the substrate. During the alternate half-cycle, the substrate acts like a cathode and is bombarded with ions.

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