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Device Fabrication Using Paint On Diffusion Sources

IP.com Disclosure Number: IPCOM000075726D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 45K

Publishing Venue

IBM

Related People

Berkenblit, M: AUTHOR [+4]

Abstract

This fabrication technique utilizes paint-of sources to apply one or more types of doped oxides, thus permitting simultaneous diffusion of more than a single type dopant.

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Device Fabrication Using Paint On Diffusion Sources

This fabrication technique utilizes paint-of sources to apply one or more types of doped oxides, thus permitting simultaneous diffusion of more than a single type dopant.

In this technique, a first doped oxide layer region 10 and a thin overlying protective glass layer 12 is deposited and delineated by photolithographic techniques on wafer 14, consisting of an epi layer 16 on a base wafer 18. As shown in B, a subsequent doped layer 20 is deposited on the surface of wafer 14, which layer has embodied therein a different dopant than is contained in layer
10. The various doped layers are formed by depositing a paint-on composition containing a siloxane combined with a suitable dopant. The siloxane is deposited by spinning or the like and heated to form an SiO(2) layer. As shown in C, layer 20 is delineated to form doped oxide regions 22 using conventional photolithographic techniques. As shown in D, a cap or protective layer 24 of undoped SiO(2) is deposited over regions 10 and 22 by the same paint-on technique. The wafer is then heated to diffuse the dopants in the doped layer regions 10 and 22 to form diffused regions 26 and 28, respectively. As indicated, layer region 10 can embody a dopant having a slower diffusion rate than the dopant embodied in layer region 22. Thus, shallow and deep diffusion can be formed simultaneously in wafer 14.

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