Browse Prior Art Database

Paint On Diffusion Source for Semiconductors

IP.com Disclosure Number: IPCOM000075730D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 16K

Publishing Venue

IBM

Related People

Berkenblit, M: AUTHOR [+5]

Abstract

This technique for forming a doped SiO(2) layer on a semiconductor utilizes poly metaloxanosorgano siloxanes, which can be conveniently applied to the surface of a semiconductor. This results in improved properties of the source film and greater safety in handling during operation.

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Paint On Diffusion Source for Semiconductors

This technique for forming a doped SiO(2) layer on a semiconductor utilizes poly metaloxanosorgano siloxanes, which can be conveniently applied to the surface of a semiconductor. This results in improved properties of the source film and greater safety in handling during operation.

In this technique, a paint-on source, capable of introducing controlled amounts of impurities, such as arsenic, antimony, phosphorus, boron and the like into semiconductor wafers, having the general chemical configuration , , , , , , ,

-M-O-Si-O-M-O-Si-;

' ' ' ' ' ' ' is applied to a wafer, and heated. The siloxane, which can be poly dimethyl siloxane or any equivalent material treated with, for example, triethyl arsenate or any tri alkyl arsenate or alkyl arsonic acid ester with base acid or heavy metal M, is treated to form long chain polymers of silicon containing arsenic or other dopant elements.

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