Browse Prior Art Database

Energy Absorbing Coating to Prevent SiO(2) Overlay Cracking on Devices

IP.com Disclosure Number: IPCOM000075741D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 23K

Publishing Venue

IBM

Related People

Burger, WG: AUTHOR

Abstract

An energy absorbing coating 1, with physical properties similar to that of Kodak Thin Film Resist (KTFR), is applied to semiconductor device 2 to prevent physical damage to the silicon dioxide passivation layers 3. The KTFR is manufactured by the Eastman Kodak Company of Rochester, N.Y. The terminal metallurgy is in the form of lead tin balls 4 and the metallization is shown at 5. The silicon is shown at 6.

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Energy Absorbing Coating to Prevent SiO(2) Overlay Cracking on Devices

An energy absorbing coating 1, with physical properties similar to that of Kodak Thin Film Resist (KTFR), is applied to semiconductor device 2 to prevent physical damage to the silicon dioxide passivation layers 3. The KTFR is manufactured by the Eastman Kodak Company of Rochester, N.Y. The terminal metallurgy is in the form of lead tin balls 4 and the metallization is shown at 5. The silicon is shown at 6.

The protective coating of KTFR is left on the devices 2 during production line handling operations to protect them against damage that would otherwise substantially reduce the yield, and result in a reliability exposure.

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