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Di-Istor Speed Up Word Drive with Resistor Word Bottom

IP.com Disclosure Number: IPCOM000075742D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Blount, FT: AUTHOR [+7]

Abstract

Current from the source consisting of diode D1, transistor T3 and resistor R1 increases the rate at which the voltage across resistor RB changes, thus permitting rapid reading and writing of data into this storage cell.

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Di-Istor Speed Up Word Drive with Resistor Word Bottom

Current from the source consisting of diode D1, transistor T3 and resistor R1 increases the rate at which the voltage across resistor RB changes, thus permitting rapid reading and writing of data into this storage cell.

When data is not being either read into the storage cell or written out of the storage cell the voltage VT is held at about 0.9 volt, causing current to flow through one of transistors T1 or T2 and through resistor RB. In the process of reading or writing data into the cell, the voltage VT is increased to 1.9 volts. This increases the current flow through transistor T1 or T2 so that the voltage VB across resistor RB becomes larger, cuts off emitter e2 or e3 and turns on emitter e1 or e4 so that the data stored in, the cell can be sensed at the emitters e1 and e4, or changed by adjusting the voltage levels at emitters e1 and e4.

The time it takes to sense or change the data in the cell therefore depends on how quickly the current flowing through resistor RB can be increased. To increase current flow through resistor RB as quickly as possible, transistor T3, diode D1 and resistor R1 are added. Now, when transistor T4 is turned on to increase the voltage VT, transistor T3 is also turned on resulting in current flowing through diode D1 and transistor T3 to provide additional current through resistor RB.

Resistor RL controls the V vs 1 characteristic of the di-istor D1 - T3, so that the voltage VB...