Browse Prior Art Database

Two Word Line Per Bit Magnetic Film Memory

IP.com Disclosure Number: IPCOM000075745D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Paton, A: AUTHOR

Abstract

In a memory having a magnetic film 10, capacitive noise is substantially eliminated during read operation by employing two adjacent word lines 12, 14 per bit A with one of the word lines 12 having, for example, a first alternating current 16 of a given phase applied thereto, and the other of the word lines 14 having an alternating current 18 of a phase opposite the given phase applied thereto.

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Two Word Line Per Bit Magnetic Film Memory

In a memory having a magnetic film 10, capacitive noise is substantially eliminated during read operation by employing two adjacent word lines 12, 14 per bit A with one of the word lines 12 having, for example, a first alternating current 16 of a given phase applied thereto, and the other of the word lines 14 having an alternating current 18 of a phase opposite the given phase applied thereto.

Alternating currents 16, 18, which are of the same amplitude, are applied to word lines 12, 14 from word driver 20. Sense amplifier 22 is coupled to sense line 24.

The signal from bit A in sense line 24 produced by read current 16 in word line 12 is Vs omega + Vs2 omega + Vc, where VS omega is the component of signal at frequency omega, Vs2 omega is the component of signal at frequency 2 omega and Vc is the capacitive noise voltage, and the signal from bit A in sense line 24 produced by read current 18 in word line 14 is -Vs omega + Vs2 omega - Vc. Thus, the resultant signal sensed by sense amplifier 22 is 2Vs2 omega, which is free of capacitive noise.

Information may be stored in the film, as at bit A, by applying direct current to each of the two word lines of a bit, while simultaneously applying a bit current of appropriate polarity to selected bit/sense lines, in accordance with conventional techniques.

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