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Semiconductor Supported Magnetic Film Memory

IP.com Disclosure Number: IPCOM000075750D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 50K

Publishing Venue

IBM

Related People

Kruggel, RH: AUTHOR [+2]

Abstract

Magnetic films 10 and associated electrical drive and sense circuits, including, e.g., transistor 12, are supported on opposite sides of a common semiconductor substrate, such as a p-type silicon chip 14, with interconnections made through via holes 16 drilled through chip 14.

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Semiconductor Supported Magnetic Film Memory

Magnetic films 10 and associated electrical drive and sense circuits, including, e.g., transistor 12, are supported on opposite sides of a common semiconductor substrate, such as a p-type silicon chip 14, with interconnections made through via holes 16 drilled through chip 14.

Disposed on one side of chip 14 is an epitaxial layer 18 with transistor 12 having emitter 20, base 22, collector 24 and buried subcollector 26 formed therein with suitable isolation diffusions 28. A first oxide layer 30, such as silicon dioxide, is then provided over epitaxial layer 18. A low-resistance connection through holes 16 is made by a diffusion region 32.

On the surface of the opposite side of chip 14, a second oxide layer 34 is disposed before forming magnetic films 10, which may be any conventional magnetic film structure, e.g., coupled films, and conductive lines, such as bit/sense lines 36 and word line 38. Connections between word line 38 and a metallic layer 40 contacting collector 24 of transistor 12 are made through the diffusion region 32 surrounding via hole 16. Additional lines and circuit elements are interconnected through other similar via holes.

By employing electron beam techniques, holes may be drilled through 10 mil thick ceramic on 2 mil centers.

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