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Self Contained Chip Heater

IP.com Disclosure Number: IPCOM000075763D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Reilly, DF: AUTHOR [+2]

Abstract

A major reliability concern in the fabrication of FET transistors is the presence of excessive charge in the gate oxide, To screen out potentially bad product, voltage and temperature stress is conventionally applied to the gate oxide to detect mobile ions causing gate oxide charge. The temperature for this stress is difficult to obtain, since an external heating source ordinarily must be employed such as a heating stage or an oven.

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Self Contained Chip Heater

A major reliability concern in the fabrication of FET transistors is the presence of excessive charge in the gate oxide, To screen out potentially bad product, voltage and temperature stress is conventionally applied to the gate oxide to detect mobile ions causing gate oxide charge. The temperature for this stress is difficult to obtain, since an external heating source ordinarily must be employed such as a heating stage or an oven.

High temperatures can be obtained on a semiconductor chip without the use of external heating sources, by placing a diffused resistor in close proximity to and surrounding the integrated circuit device to be temperature stressed. The chip can then be heated locally by passing a current through the diffused resistor. The diffused resistor-heater can be calibrated with the aid of a thermocouple, whereby the relationship between temperature and power dissipated in the resistor can be obtained and used in the stressing of further standard product.

Alternatively, either the diffused resistor PN junction itself, or a separate PN junction formed in a capacitor adjacent the device to be stressed and having an identical diffused resistor around it, can be employed to calibrate the heating effect produced by the diffused resistor heater. The forward current-voltage characteristic of a PN junction is a function of a temperature of the chip in which the junction is formed. Thus, the means for heating the chip and the me...