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Low Magnetostrictive EuO Films

IP.com Disclosure Number: IPCOM000075806D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR

Abstract

Doped EuO films are prepared by simultaneous evaporation of four materials in an ultrahigh vacuum system. These films are useful in beam-addressable memories and other magneto-optic devices. They have high T(c), high H(c), square loops, and low magnetostriction.

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Low Magnetostrictive EuO Films

Doped EuO films are prepared by simultaneous evaporation of four materials in an ultrahigh vacuum system. These films are useful in beam-addressable memories and other magneto-optic devices. They have high T(c), high H(c), square loops, and low magnetostriction.

The materials which are simultaneously evaporated are Eu (99.9% purity), Fe (99.999% purity), and (Eu(2)O(3))(0.95)(Gd(2)O(3))(0.05).

The oxide purities are 99.99%. The background pressure is 2x10/-9/ Torr before evaporation, which rises to 2x10/-7/ Torr during evaporation.

Films are deposited at a rate of approximately 10 angstroms/ second for a source-substrate distance of 30 cms. The weight ratio of Eu to the mixed oxide is 1.3, and the Fe concentration is 5.9%. The substrates were baked at 250 degrees C for 30 minutes prior to deposition at 75 degrees C. The relatively insensitive H(c) allows deposition of these films onto almost any glassy substrate, such as fused quartz, BSC glass and pyrex glass.

The optical absorption band has peak absorption at 5900 angstroms (at 300 degrees K), with the absorption coefficient being 2.5x10/5//cm. The ferromagnetic Curie temperature is increased to 180 degrees K. The films have square hysteresis loops which extend up to the high-temperature region. The films have H of the order of 100 0e, H(c) being relatively independent of substrate materials.

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