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Reducing Boron Concentration in Semiconductors

IP.com Disclosure Number: IPCOM000075820D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Crowder, BL: AUTHOR [+2]

Abstract

Boron is a widely used dopant for semiconductors and it is advantageous to be able to trim the boron (reduce its concentration) after a semiconductor device is made.

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Reducing Boron Concentration in Semiconductors

Boron is a widely used dopant for semiconductors and it is advantageous to be able to trim the boron (reduce its concentration) after a semiconductor device is made.

To reduce the boron concentration the semiconductor wafer is irradiated with protons above 500 keV. This reduces the boron without leaving a residue and without degrading device performance by the reaction B/11/ + P approaches 3 He/4/. Since helium has a very high-diffusion constant in semiconductors such as silicon, it will out-diffuse when the semiconductor is heated to approximately 800 degrees C to anneal the radiation damage.

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