Browse Prior Art Database

LPE of LED Arrays with Grown Junctions

IP.com Disclosure Number: IPCOM000075822D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Liquid phase epitaxy (LPE) provides the most efficient light emitting diodes (LED) in certain materials such as GaP and Al(x)Ga(1-x)As. However, the process can be used only for the fabrication of discrete diodes at the present time. To overcome this limitation, it is proposed to form X-Y arrays using LPE through holes in an appropriate mask.

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LPE of LED Arrays with Grown Junctions

Liquid phase epitaxy (LPE) provides the most efficient light emitting diodes (LED) in certain materials such as GaP and Al(x)Ga(1-x)As. However, the process can be used only for the fabrication of discrete diodes at the present time. To overcome this limitation, it is proposed to form X-Y arrays using LPE through holes in an appropriate mask.

An Al(2)O(3) layer is sputtered onto a GaAs substrate. Holes are etched in the layer, after which PN junctions are produced by LPE through the holes in the Al(2)O(3) layer. This provides an LED at each hole location.

A metallization pattern is placed on top of the diodes to form contacts in the X direction, prior to embedding the array in epoxy. The substrate is removed by etching so that evaporation of contacts in the Y direction can be made on the bottom of the diodes.

Sufficient area is left uncovered so that light can exit. By mounting diodes in this way the high bandgap material is at the surface where the light is to exit. The angular facets produced by LPE growth through holes in the oxide also serve as reflectors, which should increase the light output.

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