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High Temperature Multicontact Test Probe

IP.com Disclosure Number: IPCOM000075851D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 53K

Publishing Venue

IBM

Related People

Hammer, R: AUTHOR

Abstract

A pneumatically operated multicontact probe for making simultaneous tests of large arrays of metal-oxide-silicon field-effect transistors (MOSFET's) at elevated temperatures, i.e., in excess of 300 degrees C, has been devised.

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High Temperature Multicontact Test Probe

A pneumatically operated multicontact probe for making simultaneous tests of large arrays of metal-oxide-silicon field-effect transistors (MOSFET's) at elevated temperatures, i.e., in excess of 300 degrees C, has been devised.

The probe comprises an array of hollow tubes 2, mounted on an insulated support 4 mounted on walls of a closed chamber 6. The chamber houses a gas under pressure. Contained within the lower tip of each tube is a metallic plunger
8. These plungers are urged against a large array 10 of MOSFET units to be tested. Insulated electrical wires 12 are connected through each tube to an associated plunger, which wires carry electrical signals from a MOSFET in an array to the appropriate test circuit, not shown. Holes 14 in each tube provide access to the tube of pressurized gas, entering through a valve, for urging a plunger towards a MOSFET unit below it.

The simultaneous actuation of the plungers can take place in an oven heated to over 300 degrees C in that the moving parts do not require springs or involve electromechanical elements, such as electromagnetics. The MOSFET devices must be tested in very clean environments and at high temperatures. Electromagnets used in such tests would tend to contaminate the testing area as well as to break down.

The chambers may be evacuated by opening the valve to vacuum for the purpose of raising the plungers. Access to the chamber for substituting different arrays can b...