Browse Prior Art Database

Liquid Phase Epitaxy of a Ternary Element

IP.com Disclosure Number: IPCOM000075863D
Original Publication Date: 1971-Nov-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Liquid phase epitaxial deposition of Ga(1-x)Al(x)As is achieved on a substrate of single crystal GaAs, having a <100> orientation. Te is used as the N-type dopant. 20 gms Ga, 0.055 gms Al, 3.5 gms GaAs, and 0.003 gms Te are melted. As illustrated, the melt is initially heated to 955 degrees C (point A) and then cooled to about 900 degrees C at a cooling rate of 0.4 degrees C/minute, so as to grow an epitaxial layer on the substrate. When point B is reached, the temperature is maintained 5 minutes to point C and then raised either 5 degrees to 905 degrees C (point B') or 10 degrees to 910 degrees C (point B''). The temperature is maintained at either of these values for 5 minutes (points C' or C''), then cooled to 900 degrees C at the same rate of 0.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Liquid Phase Epitaxy of a Ternary Element

Liquid phase epitaxial deposition of Ga(1-x)Al(x)As is achieved on a substrate of single crystal GaAs, having a <100> orientation. Te is used as the N-type dopant. 20 gms Ga, 0.055 gms Al, 3.5 gms GaAs, and 0.003 gms Te are melted. As illustrated, the melt is initially heated to 955 degrees C (point A) and then cooled to about 900 degrees C at a cooling rate of 0.4 degrees C/minute, so as to grow an epitaxial layer on the substrate. When point B is reached, the temperature is maintained 5 minutes to point C and then raised either 5 degrees to 905 degrees C (point B') or 10 degrees to 910 degrees C (point B''). The temperature is maintained at either of these values for 5 minutes (points C' or C''), then cooled to 900 degrees C at the same rate of 0.4 degrees C/minute until either D' or D'' is reached to produce a regrown layer of the order of a few microns.

As a Pi type dopant, Zn is subsequently diffused into the surface of these layers at 700 degrees C for 30 minutes. The quantum efficiencies of light- emitting diodes made on layers of GaAlAg grown with a remelting cycle is improved by a factor of five, as compared with those diffused diodes that do not have a remelting cycle.

1

Page 2 of 2

2

[This page contains 1 picture or other non-text object]