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Improved Integrated Circuit Characteristics

IP.com Disclosure Number: IPCOM000075880D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Siegle, WT: AUTHOR

Abstract

Modern integrated circuit memory chip designs include both an array of storage cells and the support circuitry for selecting, driving and sensing particular cells in the array. With some cells designs, it is possible to layout the array portion of the chip without necessitating any contact between the interconnection metallurgy and the silicon with its diffusions. Within the area of the chip that contains the support circuitry, such contacts can and normally would exist. An example of such an array which fits this description is described in IBM Technical Disclosure Bulletin, June 1969, page 202. The design as presently envisioned, contains no metal-to-silicon contacts within the array.

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Improved Integrated Circuit Characteristics

Modern integrated circuit memory chip designs include both an array of storage cells and the support circuitry for selecting, driving and sensing particular cells in the array. With some cells designs, it is possible to layout the array portion of the chip without necessitating any contact between the interconnection metallurgy and the silicon with its diffusions. Within the area of the chip that contains the support circuitry, such contacts can and normally would exist. An example of such an array which fits this description is described in IBM Technical Disclosure Bulletin, June 1969, page 202. The design as presently envisioned, contains no metal-to-silicon contacts within the array. As a consequence of this feature, any or all of the following process differences can be applied to the array portion of the chip to result in improved overall chip characteristics.

1. Thin aluminum - Very thin aluminum (on the order of 1000 Angstroms) can be utilized within the array. Since there are no contacts to diffusions, the average current in the array metallurgy must be zero and electromigration effects will not be present. Use of a thinner metallurgy will permit better control of etching tolerances and hence layout densities, than is possible with thicker aluminum and may also provide greater reliability through better self-healing characteristics of thin aluminum gate.

2. Post aluminum heat treatment - After aluminum depositio...