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Nondestructive Stored Charge Detection by Gate Resistance Sensing

IP.com Disclosure Number: IPCOM000075885D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Heller, LG: AUTHOR

Abstract

The presence or absence of charge stored in a semiconductor body at the semiconductor insulator interface can be detected nondestructively, by sensing the resistance of a semiconducting gate overlying the stored charge. In the figure, a semiconductor P-type body 10 has a stored information therein in the form of a quantity of minority carriers; e.g., electrons. These electrons are located in a storage region 12 in the body 10. The surface of the body 10 has an insulating layer 13 deposited thereon. In the layer 13 there is disposed a semiconducting gate in the form of a line 14. This gate should be composed of N-type material.

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Nondestructive Stored Charge Detection by Gate Resistance Sensing

The presence or absence of charge stored in a semiconductor body at the semiconductor insulator interface can be detected nondestructively, by sensing the resistance of a semiconducting gate overlying the stored charge. In the figure, a semiconductor P-type body 10 has a stored information therein in the form of a quantity of minority carriers; e.g., electrons. These electrons are located in a storage region 12 in the body 10. The surface of the body 10 has an insulating layer 13 deposited thereon.

In the layer 13 there is disposed a semiconducting gate in the form of a line 14. This gate should be composed of N-type material. It is to be noted in the figure, that the semiconducting line 14 approaches more closely to the surface of the body 10 at a central region 15 where it overlies the storage region 12, than over the remainder of the body. This permits any charge contained in the storage region 12 to deplete the central region 15 of the line 14 immediately positioned over storage region 12, of N-type carriers. Depletion of the semiconductor line 14 in its central region 15 causes the resistance of the line 14 to increase. Thus the presence of a stored charge in the region 12 in the body 10 can be detected nondestructively by sensing the resistance of the line 14. A large resistance indicates the presence of stored charge in the body 10 and a small resistance indicates an absence of stored charge...