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Writable Read Only Memory Utilizing Electrophoresis

IP.com Disclosure Number: IPCOM000075932D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 40K

Publishing Venue

IBM

Related People

Simon, AM: AUTHOR

Abstract

Transistor emitter contact 1 of a read-only memory cell is initially not connected to word line 2. Through glass via 3 provides access to the unmetallized gap. Diffused base 4 serves as the bit line of the cell. A small amount of electrophoretically depositable polymer is placed over the array portion of the chip. If the cell is to have a "0" written into it, a 5 volt potential is applied between the bit line 4 and word line 2 of the cell with the emitter contact 1 being positive with respect to word line 2. Insulative coating 5 deposits on emitter contact 1 causing the cell to be selectively insulated. All cell vias of the chip are then filled with metal using evaporative and photolithographic techniques. The selectively insulated cells remain unconnected ")" whereas the other cells become connected "1".

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Writable Read Only Memory Utilizing Electrophoresis

Transistor emitter contact 1 of a read-only memory cell is initially not connected to word line 2. Through glass via 3 provides access to the unmetallized gap. Diffused base 4 serves as the bit line of the cell. A small amount of electrophoretically depositable polymer is placed over the array portion of the chip.

If the cell is to have a "0" written into it, a 5 volt potential is applied between the bit line 4 and word line 2 of the cell with the emitter contact 1 being positive with respect to word line 2. Insulative coating 5 deposits on emitter contact 1 causing the cell to be selectively insulated. All cell vias of the chip are then filled with metal using evaporative and photolithographic techniques. The selectively insulated cells remain unconnected ")" whereas the other cells become connected "1".

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