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Simultaneous Polycrystalline and Monocrystalline Epitaxial Silicon Growth

IP.com Disclosure Number: IPCOM000075946D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jadus, DK: AUTHOR [+3]

Abstract

This is a method for the simultaneous polycrystalline and monocrystalline epitaxial growth of silicon, which comprises providing a single crystal silicon substrate upon which an insulating silicon oxide layer is formed by conventional means, such as subjecting the substrate to an oxidizing atmosphere at an elevated temperature.

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Simultaneous Polycrystalline and Monocrystalline Epitaxial Silicon Growth

This is a method for the simultaneous polycrystalline and monocrystalline epitaxial growth of silicon, which comprises providing a single crystal silicon substrate upon which an insulating silicon oxide layer is formed by conventional means, such as subjecting the substrate to an oxidizing atmosphere at an elevated temperature.

A polycrystalline layer of silicon is formed over the silicon oxide insulating layer and an opening provided through the layers to the monocrystalline substrate, for example, by a suitable etchant. The structure is then subjected to epitaxial growth conditions, whereupon monocrystalline silicon will grow upon the exposed monocrystalline substrate and polycrystalline silicon will form over the prior deposited polycrystalline layer. The prior deposited polycrystalline layer provides uniform nucleation and growth of this polycrystalline layer, which establishes good electrical contact with the monocrystalline region.

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