Browse Prior Art Database

Photoresist Exposure Process

IP.com Disclosure Number: IPCOM000075949D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Clecak, NJ: AUTHOR [+4]

Abstract

Exposure times for photoresists are reduced by exposing the resist at an elevated temperature.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Photoresist Exposure Process

Exposure times for photoresists are reduced by exposing the resist at an elevated temperature.

A photoresist composition of a cyclized poly-cis-isoprene and an azide sensitizer is coated on a semiconductor wafer. The resist is exposed by a step and repeat projection exposure apparatus at a wavelength of 4050 angstroms while being heated at a temperature of 125 degrees C, or about 10 degrees C below the decomposition temperature of the azide sensitizer. The time required is about 0.03 second for each exposure. Exposure of the same resist at room temperature requires about 0.5 second per exposure. The heating of the resist allows a 15 times reduction in exposure time, which results in a substantial time saving in total exposure time for the step and repeat process.

1