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Bubble Domain Device With Increased Speed

IP.com Disclosure Number: IPCOM000075973D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Kuhn, L: AUTHOR [+3]

Abstract

A device using GaFeO(3) as the bubble domain material is shown in Figs. 1 and 2, which represent a top view and a side view, respectively, of the device. Domains 10 are propagated in GaFeO(3) sheet 12 by the action of the rotating propagation field H on the permalloy T and 1 bars 14. A bias field H(Z) normal to sheet 12 stabilizes the diameter of domains 10.

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Bubble Domain Device With Increased Speed

A device using GaFeO(3) as the bubble domain material is shown in Figs. 1 and 2, which represent a top view and a side view, respectively, of the device. Domains 10 are propagated in GaFeO(3) sheet 12 by the action of the rotating propagation field H on the permalloy T and 1 bars 14. A bias field H(Z) normal to sheet 12 stabilizes the diameter of domains 10.

Located on permalloy bars 14 in the area of sheet 12 where the domains turn corners are conductors 16. Since GaFeO(3) is magnetoelectric, application of a voltage to conductors 16 and ground plane 18 produces an electric field across sheet 12. This in turn increases the mobility of sheet 12 in the regions beneath conductors 16. Consequently, domains 10 have increased speed when propagating around corners. The required electric field can be as low as 3kv/cm, for a 10 micron thick sheet 12.

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