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Bistable Resistor

IP.com Disclosure Number: IPCOM000075974D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

This bistable resistor uses an insulator comprising EuO doped with excess Eu. The insulator is contacted with metal electrodes and applications of varying voltages thereto cause the device to be in one of two resistance states.

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Bistable Resistor

This bistable resistor uses an insulator comprising EuO doped with excess Eu. The insulator is contacted with metal electrodes and applications of varying voltages thereto cause the device to be in one of two resistance states.

The insulating medium is prepared in a ultrahigh vacuum evaporator system. The base electrode comprises Ta, which is approximately 6,000 angstroms thick. The intermediate layer of Eu doped EuO is approximately 1500 angstroms thick, while the counterelectrode of Bi is approximately 6000 angstroms thick. Vacuum evaporation through masks is used to provide the electrodes.

Coevaportion of Eu and Eu(2)O(3) is used to provide the bistable insulator. The evaporator is baked out at 130 degrees C for two hours and starting pressure is 1X10/-9/ Torr. During evaporation, the pressure is maintained between 8X10/-8/ and 2X10/-7/ Torr. The evaporation rate is approximately 500 angstroms/minute. The substrate temperature is 100 degrees C while the weight ratio of Eu/Eu(2)O(3) is 2.4.

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