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High Power Optically Pumped Multilayer Semiconductor Laser

IP.com Disclosure Number: IPCOM000076040D
Original Publication Date: 1971-Dec-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Hodgson, RT: AUTHOR [+3]

Abstract

A structure which effectively increases the active volume of a semiconductor laser is presented. The structure consists of the following:

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High Power Optically Pumped Multilayer Semiconductor Laser

A structure which effectively increases the active volume of a semiconductor laser is presented. The structure consists of the following:

Thin Ga(1-y)Al(y)As layers 1, sandwiched between Ga(1-x)Al(x)As layers 2.

A laser pump 3 whose light is not highly absorbed by the Ga(1-x)Al(x)As layers 2 but which is highly absorbed by the Ga(1-y)Al(y)As layers 1. Typical pumps could be pulsed or CW ruby lasers, dye lasers or any source with pump light in the range 580-690 nm. The Ga(1-y)Al(y)As layers 1 are of equal thickness, i.e., 0.3- 3.0 microns and each layer has a value of y such that each layer absorbs the same fraction of the original pumping beam consistent with threshold conditions. Values of y can be chosen to have values from zero to 0.3.

The structure is shown schematically in the Figure in which ten layers are illustrated by the shaded bands in the Figure. The advantages of this structure are:

1) Given that a single-layer laser structure can produce power of amount D/surface area, n layers of this structure should produce (n D) per unit area of pumping surface. It should be noted that attempts to obtain such power from a single layer would result in burn out of the laser, since such high-power absorption by a single thin layer would result in destructive heating.

2) The optical index difference between the absorbing and nonabsorbing layers of this structure is sufficiently small to prevent appreciable r...