Browse Prior Art Database

Photoresist for Use in Silicon Nitride Etching Baths

IP.com Disclosure Number: IPCOM000076082D
Original Publication Date: 1972-Jan-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cortellino, CA: AUTHOR [+3]

Abstract

A method is described for modifying Shipley AZ-1350* and -1350H* photoresist to enhance their resistance to silicon nitride etch baths (200 degrees C molten ammonium phosphate).

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Photoresist for Use in Silicon Nitride Etching Baths

A method is described for modifying Shipley AZ-1350* and -1350H* photoresist to enhance their resistance to silicon nitride etch baths (200 degrees C molten ammonium phosphate).

The modification of the Shipley AZ-1350 and -1350H resist employ the addition of small quantities of UFORMITE** Resin-MM-46 (a melamine resin), in combination with a thermal cross-linking postbake. In a typical formulation, 0.8% by weight of the additive resin is blended into the Shipley AZ-1350 and -1350H resist. After blending, the modified resist can then be processed in a normal manner through the post-bake step where a higher temperature, e.g. 180-280 degrees C, bake is employed for 15 minutes to prepare it for the etching operation. It was found that the modified Shipley resists are rendered chemically and thermally resistant to the indicated silicon nitride etch baths, to provide suitably etch resistant and dimensionally stable resist coatings. * Products of Shipley Co., Inc. ** Trademark and product of Rohm & Haas Co.

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