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Semitransparent Tin Oxide Photomasks

IP.com Disclosure Number: IPCOM000076169D
Original Publication Date: 1972-Jan-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Laming, FP: AUTHOR [+2]

Abstract

Artwork photomasks for electronic photolithography -- which are transparent to nonactinic (safe) light radiation in a select visible range and opaque to actinic radiation in another range -- are useful to permit visual alignment of mask and objects prior to photo exposure. Such photomasks may be formed by reactively sputtering tin oxide upon appropriate transparent support media (e.g. glass) in 100% O(2) atmosphere and etching the resultant film through patterned KTFR* resist, in a solution of 10M NaOH at 75 degrees C.

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Semitransparent Tin Oxide Photomasks

Artwork photomasks for electronic photolithography -- which are transparent to nonactinic (safe) light radiation in a select visible range and opaque to actinic radiation in another range -- are useful to permit visual alignment of mask and objects prior to photo exposure. Such photomasks may be formed by reactively sputtering tin oxide upon appropriate transparent support media (e.g. glass) in 100% O(2) atmosphere and etching the resultant film through patterned KTFR* resist, in a solution of 10M NaOH at 75 degrees C.

The transmission of the oxide layer rises sharply to a constant high level above 4500 angstroms from a constant low level below 4000 angstroms (UV range). Thus such masks are ideally suited for object alignment in green light (5300 angstroms) safelight or yellow (5900 angstroms) safelight and object exposure with UV. * Product of Eastman Kodak Co.

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