Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Deposition of Silicon Nitride

IP.com Disclosure Number: IPCOM000076187D
Original Publication Date: 1972-Jan-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Eisenmann, DE: AUTHOR

Abstract

These methods allow deposition of silicon nitride films at low temperatures.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Deposition of Silicon Nitride

These methods allow deposition of silicon nitride films at low temperatures.

Silicon nitride films are deposited by vapor deposition or cold plasma techniques, utilizing starting materials comprising silicyl-amines such as: (H(3)Si)(3)N, (H(3)Si)(2)NH and (H(3)Si)NH(2). In addition to providing silicon nitride films at low temperatures these reactants do not require the use of halogen containing catalysts or other halogen-containing reactants, which produce by-products detrimental to silicon semiconductor surfaces and metallurgy.

1