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Making a High Storage Display Tube

IP.com Disclosure Number: IPCOM000076199D
Original Publication Date: 1972-Jan-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 3 page(s) / 41K

Publishing Venue

IBM

Related People

Cowher, ME: AUTHOR [+2]

Abstract

A method for manufacturing a Si-SiO(2) layer has been devised, which is compatible with the manufacture of a storage display tube having a fast-writing speed.

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Making a High Storage Display Tube

A method for manufacturing a Si-SiO(2) layer has been devised, which is compatible with the manufacture of a storage display tube having a fast-writing speed.

A storage display tube, capable of high-speed writing rates, consists of the following layers built up sequentially: 1) glass substrate; 2) interdigitating transparent conducting lines; 3) ZnS electroluminescent phosphor in a plastic binder; 4) sputtered CdO; and 5) evaporated SiO.

Such multilayered device operates by charging a selected area of the surface of the SiO with an electron beam. The conductivity of the underlying semiconductor CdO is greatly increased by the field effect so that current passes from a conducting line up through the phosphor to a neighboring conducting line, light being generated in those areas where current passes.

Although most semiconductor-insulator layer combinations could be used for the two top layers of the display tube, a field-effect layer with good electrical stability is designed. Si-SiO(2) is such a field-effect layer, but the latter requires temperatures above 200 degrees C for their manufacture and the ZnS phosphor that is a part of the display tube cannot withstand such temperatures, requiring the topmost layers of CdO-SiO to be sputtered or evaporated at low temperatures.

The following process steps allow for the manufacture of the compound layer Si-SiO(2) as a separate unit, at the desired high temperature, so that it is a good ...