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Zinc Diffusion Source for Fabrication of III V Devices

IP.com Disclosure Number: IPCOM000076219D
Original Publication Date: 1972-Jan-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Ku, SM: AUTHOR

Abstract

Zinc doped gallium arsenide used as a zinc diffusion source for fabrication of III-V devices enables diffusion to be performed in the "b" region of the phase diagram, but close to the boundary of the "a" region. This new zinc diffusion source permits uniformly reproducible junction depths with no surface deterioration.

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Zinc Diffusion Source for Fabrication of III V Devices

Zinc doped gallium arsenide used as a zinc diffusion source for fabrication of III-V devices enables diffusion to be performed in the "b" region of the phase diagram, but close to the boundary of the "a" region. This new zinc diffusion source permits uniformly reproducible junction depths with no surface deterioration.

The process for the preparation of this zinc diffusion source is as follows: 1) Clean undoped gallium arsenide polycrystalline ingots in a 5:1 buffered HF etch, and rinse in deionized water. 2) Powder the gallium arsenide ingot. 3) Seal two boats in a diffusion capsule, one containing the powdered gallium arsenide, the other containing 6-9 purity zinc (about 10% the weight of the powdered gallium arsenide) under a vacuum of 5 x 10-6 Torr or lower. 4) Meat the capsule for 24- 36 hours at approximately 975 degrees C. 5) Homogenize the contents after this cycle and reseal the capsule for an additional 24 hours of heat treatment, at 975 degrees C to further enhance the homogeneity. 6) Rehomogenize the content again after the second heat treatment.

Diffusion sources made in the above-described manner not only provide better controlled diffusion depth and more easily reproducible characteristics for closed-capsule diffusion in III-V compounds, but also eliminate surface deterioration.

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