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Bubble Domain Three Dimensional Magneto Optic Memory

IP.com Disclosure Number: IPCOM000076241D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Chang, H: AUTHOR

Abstract

A large capacity storage is provided by stacked magnetic chips, each of which is slightly displaced with respect to the others. The kerr magnetooptic effect is used for sensing the presence or absence of bubble domains present in selected areas of each chip.

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Bubble Domain Three Dimensional Magneto Optic Memory

A large capacity storage is provided by stacked magnetic chips, each of which is slightly displaced with respect to the others. The kerr magnetooptic effect is used for sensing the presence or absence of bubble domains present in selected areas of each chip.

Referring to Figs. 1A and 1b the chips 1 are stacked so that portions 2 extend slightly beyond the boundary of the underlying chip. The portion of each chip extending beyond the boundary of the adjacent chip is the region of that chip where bubble domains are sent. Each selected region has the backing of reflective material 3 which reflects the instant light 4 that is used for sensing.

Two stacks of chips 10 and 12, are placed in close proximity to one another so that a single light beam can be used to illuminate both. The total area of the exposed regions of each chip for each stack is the same.

Through the control of logic elements, only one shift register on each chip is selected at one time to shift its string of bubble domains into the sensing area 2 of that chip. Thus, there is at most only one bubble at a time in the entire sensing area Al and A2. The analyzer and polarizer used at the magneto-optic sensing favors the transmission of light reflected by a bubble domain while discriminating against the background light.

Through the use of backing, with only selected sensing carriers of each chip exposed, the sensing light beam need not be scanned and n...