Browse Prior Art Database

In(1*x)Al(x)As Material for Three Level Oscillator

IP.com Disclosure Number: IPCOM000076252D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 25K

Publishing Venue

IBM

Related People

Lorenz, MR: AUTHOR [+2]

Abstract

The conduction band structure of In(1-x)Al(x)As is shown. From this structure it is possible to fabricate a three-level Gunn effect oscillator using this material. The relative energies of the conduction band can be optimized by adjusting the alloy composition. For instance, normal Gunn oscillator operation can be achieved for 0.3 (E(gx) - E(g gamma)). Three-level operation can be achieved from x

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In(1*x)Al(x)As Material for Three Level Oscillator

The conduction band structure of In(1-x)Al(x)As is shown. From this structure it is possible to fabricate a three-level Gunn effect oscillator using this material. The relative energies of the conduction band can be optimized by adjusting the alloy composition. For instance, normal Gunn oscillator operation can be achieved for 0.3 </~ x </~ 0.6 i.e., E(g) gamma > (E(gx) - E(g gamma)). Three-level operation can be achieved from x </~ 0.3 to the X and L conduction band crossover (presently estimated at x ~ 0.5). Part of work sponsored under NASA Contract.

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