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Etch for Silicon Monoxide

IP.com Disclosure Number: IPCOM000076262D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Pliskin, WA: AUTHOR

Abstract

With this etchant for silicon monoxide the etch rate is significantly increased by the addition of a copper salt solution, which catalyzes the etching action through a copper displacement mechanism.

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Etch for Silicon Monoxide

With this etchant for silicon monoxide the etch rate is significantly increased by the addition of a copper salt solution, which catalyzes the etching action through a copper displacement mechanism.

The following is a specific example of the etchant for silicon monoxide: HNO(3) (70%) 60 parts HF (49%) 90 parts H(2)O 300 parts CUSO(4)
(0.1 ) 150 parts (molar)

In this specific case the addition of the copper salt solution produced an 8 fold increase in the etch rate for silicon monoxide. Various types of copper salt solutions can be utilized with various mixtures of HF, HNO(3), and H(2)O solutions.

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