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Ion Implant Dosage Control

IP.com Disclosure Number: IPCOM000076275D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Jung, G: AUTHOR [+2]

Abstract

Routine process control measurements required in ion implantation doping of semiconductors, is the determination of ion dosage uniformity across the semiconductor wafers. A rapid and convenient method of measuring beam uniformity has been developed, and the technique is suitable for use in the routine checking of ion beam processing equipment.

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Ion Implant Dosage Control

Routine process control measurements required in ion implantation doping of semiconductors, is the determination of ion dosage uniformity across the semiconductor wafers. A rapid and convenient method of measuring beam uniformity has been developed, and the technique is suitable for use in the routine checking of ion beam processing equipment.

The method comprises selecting a thin plastic film from the group consisting of cellulose acetate, polyvinyl chloride, polyethylene terephthalate (MYLAR*) and similar plastic films, and exposing the film to ion radiation until a dose of between 10/14/ and 10/15/ ions per cm/2/ is accumulated and measuring the degree of darkness resulting upon the film. The degree of darkening can be measured by a densitometer or similar means, whereby the degree of darkening is related to the accumulated dosage. * Trademark of E. I. du Pont de Nemours & Co.

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