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Composite Dielectric Layer

IP.com Disclosure Number: IPCOM000076276D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gdula, RA: AUTHOR

Abstract

In this composite dielectric layer the probability of defects that lower the dielectric strength is minimized.

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This is the abbreviated version, containing approximately 100% of the total text.

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Composite Dielectric Layer

In this composite dielectric layer the probability of defects that lower the dielectric strength is minimized.

The quality of thin film insulators has been described by those knowledgeable in the field as being related to defects variously termed "pinholes" or "cracks". The statistical behavior of dielectric breakdown, indicates that failure under a given set of conditions is related to the probability of finding a significant defect in the volume of the sample under test. Properly formed anodic SiO(2) insulator films are of very high quality, that is, they have a low detect density. Also logic instructs us that if failure is dependent on the probability of finding a significant defect in the dielectric layer under test, that composite dielectric layers, each having an independent probability will be more reliable.

This dual dielectric consists of two independently formed layers such as thermal SiO(2) and anodic SiO(2). Each layer is preferably on the order of 500 angstroms in thickness with the total being approximately on the order of 1000 angstroms.

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