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Metal Barrier Josephson Junctions Suitable for Memory Arrays

IP.com Disclosure Number: IPCOM000076319D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 19K

Publishing Venue

IBM

Related People

Basavaiah, S: AUTHOR

Abstract

A Josephson junction comprises superconducting electrodes 1 and 2 separated by a metal tunnel barrier 3. Tunnel barrier 3 is comprised of a metal which has high resistivity and is nonsuperconducting. The metal chosen does not diffuse into the superconducting electrodes. An example of a suitable metal is bismuth.

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Metal Barrier Josephson Junctions Suitable for Memory Arrays

A Josephson junction comprises superconducting electrodes 1 and 2 separated by a metal tunnel barrier 3. Tunnel barrier 3 is comprised of a metal which has high resistivity and is nonsuperconducting. The metal chosen does not diffuse into the superconducting electrodes. An example of a suitable metal is bismuth.

In order to provide junctions of submicron size which are suitable for memory arrays, the thickness of barrier 3 is decreased and the area of the junction is proportionately decreased to achieve practical current levels. This will increase the switching voltage of the device to higher values suitable for memories. For example, with copper as the metal barrier, junction dimensions 0.2 mil X 0.2 mil and a barrier thickness of 3500 angstroms will produce Josephson currents of a few milliamps and a switching voltage of about 0.1 millivolts.

Because the barrier thickness can be a few thousand angstroms rather than a few tens of angstroms as is the case with insulating barriers, fabrication complexities in terms of control and reproducibility is greatly reduced.

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