Browse Prior Art Database

Sequential Circuit Fabrication

IP.com Disclosure Number: IPCOM000076321D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Angelo, RW: AUTHOR [+2]

Abstract

This is a method for dissolving KAPTON* in an area selective manner which permits the preparation of holes and circuit lines in KAPTON, and which is compatible with sequential circuit fabrication techniques.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Sequential Circuit Fabrication

This is a method for dissolving KAPTON* in an area selective manner which permits the preparation of holes and circuit lines in KAPTON, and which is compatible with sequential circuit fabrication techniques.

The method consists essentially of the following steps: 1) Metallizing KAPTON by conventional electroless and electrolytic plating. 2) Printing a pattern on one side of the metallized KAPTON. 3) Etching to remove metal in the areas where it is desirable to remove the KAPTON. 4) Exposing the sample to molten antimony trichloride (SbCl(3)) at 65-75 degrees C for 15-20 minutes. Ultrasonic or mechanical agitation may be required. Higher temperatures can increase the rate of dissolution. 5) Rinsing in N-methylipyrrolidone and in water.

This method of dissolution of polyimide film has advantages over other thin film fabricating methods, in that it is capable of smaller and closer dimensioning. Other methods of fabrication require mechanical drilling, lasing, or the like, with a resultant degradation of the KAPTON polymer. Further, the dissolving process stops automatically at the substrate metal. * Trademark of E. I. du Pont de Nemours & Co.

1