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Formation of Conductive Layers on Barium Titanate Ceramic

IP.com Disclosure Number: IPCOM000076378D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Krongelb, S: AUTHOR

Abstract

This is a method for forming conducting layers on barium titanate ceramic (BTC) using the technique of sputter etching.

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Formation of Conductive Layers on Barium Titanate Ceramic

This is a method for forming conducting layers on barium titanate ceramic (BTC) using the technique of sputter etching.

A BTC wafer is covered with a thin film of insulation, SiO(2) being one of many insulating films that can be used, and the latter is etched to conform to the conductivity pattern desired in the BTC. The entire surface is sputter etched and the plasma in the sputtering chamber attacks the BTC in its exposed areas (those regions not covered with a protective layer of SiO(2)). The effect of sputter etching of the BTC is to increase the conductivity of the BTC surface so exposed. Conductivity increases as sputtering progresses so that resistors can be fabricated in a controlled manner. As an added benefit, this procedure allows for subsequently deposited layers of different materials to adhere to the BTC surface.

Sputter etching was achieved by placing the BTC substrate on a quartz plate on the target electrode, as is typically done for sputter etching. An argon plasma (Ar pressure about 10 mu) was used and the radio-frequency power density was
0.5 to 1.0 watts/cm/2/. This process resulted in the formation of a silvery metallic- looking film on the surface which, for 20 minutes of sputter etching, had a resistivity of about 200 K ohm/square. Additional etching for a total of 80 minutes formed a film of 20 K ohm/square.

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