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High Solution Flow Rates in Liquid Phase Epitaxy

IP.com Disclosure Number: IPCOM000076425D
Original Publication Date: 1972-Feb-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Scheel, HJ: AUTHOR [+2]

Abstract

Relative motion between wafers and solution during liquid phase epitaxial (LPE) growth reduces the thickness of the boundary layer and yields a homogeneous composition, resulting in a uniform LPE layer thickness.

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High Solution Flow Rates in Liquid Phase Epitaxy

Relative motion between wafers and solution during liquid phase epitaxial (LPE) growth reduces the thickness of the boundary layer and yields a homogeneous composition, resulting in a uniform LPE layer thickness.

Work in controlled atmosphere - e.g. with volatile solutions - is done with an accelerated container rotation technique. In its horizontal position, a container for liquid phase epitaxy is rotated about a vertical axis with periodic acceleration and deceleration. It can can also be tilted in more than one direction to allow operation with different fluids alternately.

The container is suitable for automatic LPE growth of alternating layers of different compositions. Accelerated rotation causes stirring and thus homogenization of the growing material.

For batch processing a number of wafers are located in recesses in the vessel bottom. Then the liquid to be used is decanted from its respective outer reservoir into the interior vessel. Tilting is possible about either B axis or A axis. The dam separating the reservoir from the epitaxy area has a small slope of about 20'. In horizontal position, the vessel is rotated about the C axis with changing velocity either with the same or with alternating sense of rotation.

With nonvolatile solutions, the relative motion is achieved by rotation of a substrate holder within a container. The wafers are fixed in horizontal, vertical or tilted position at the holder and m...