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Ceramic Substrate Circuitization

IP.com Disclosure Number: IPCOM000076430D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Bakos, P: AUTHOR

Abstract

In order to provide a strong adhesion between copper and a ceramic substrate which withstands subsequent high-temperature processes i.e. greater than 500 degree C, the following steps are performed: 1) Substrate surface cleaning and preparation 2) Substrate activation (sensitization) 3) Electroless plating (4-7 minutes) to obtain a uniform CuO(2) layer 4) Firing at an elevated temperature, under reduced (H(2)) atmosphere utilizing a four-zone BTU furnace 5) Electroless plating to achieve a continuous copper deposit. The film can be used as conductive cathode upon selective electrolytic plating. The thickness of the electroplated metals such as Cu, Ni, Au, etc. are selected to be between 50-300 microinches.

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Ceramic Substrate Circuitization

In order to provide a strong adhesion between copper and a ceramic substrate which withstands subsequent high-temperature processes i.e. greater than 500 degree C, the following steps are performed:
1) Substrate surface cleaning and preparation
2) Substrate activation (sensitization)
3) Electroless plating (4-7 minutes) to obtain a uniform

CuO(2) layer
4) Firing at an elevated temperature, under reduced (H(2))

atmosphere utilizing a four-zone BTU furnace
5) Electroless plating to achieve a continuous copper

deposit. The film can be used as conductive cathode

upon selective electrolytic plating. The thickness of

the electroplated metals such as Cu, Ni, Au, etc. are

selected to be between 50-300 microinches.

1