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Sealing Technique for Porous Anodic Al(2)O(3) Films

IP.com Disclosure Number: IPCOM000076458D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kotas, PG: AUTHOR [+2]

Abstract

This technique provides a nonporous anodic dielectric film for an underlying porous film.

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Sealing Technique for Porous Anodic Al(2)O(3) Films

This technique provides a nonporous anodic dielectric film for an underlying porous film.

Passivated aluminum metallurgy for integrated circuit devices can be fabricated by evaporating a film of aluminum, masking the film to delineate the desired metallurgical pattern, and subsequently anodizing the exposed aluminum to form an Al(2)O(3) layer. When this technique is applied to an aluminum- copper layer, the resultant anodic film is of a porous nature not completely satisfactory for a dielectric for separating various metallurgy metals.

In this technique, subsequent to forming the anodic Al(2)O(3) which is porous, a layer of photoresist is applied to the surface, exposed and developed to delineate the via holes. A layer of pure aluminum, on the order of 1000 angstroms, in thickness is then deposited on the wafer and anodized. This forms a nonporous anodic layer covering the underlying porous layer. The resist and overlying aluminum are then removed by using an etchant for the photoresist.

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