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High Temperature Negative Electron Beam Resist

IP.com Disclosure Number: IPCOM000076463D
Original Publication Date: 1972-Mar-01
Included in the Prior Art Database: 2005-Feb-24
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cortellino, CA: AUTHOR [+3]

Abstract

Current electron-beam resists have been found to have a tendency to flow under high temperature, causing image loss. Photoresist formulations have been developed, with improved stability, from epoxy-acrylic and melamine-acrylic formulations, which when spin-coated from solutions, and prebaked at 160 Degrees C form negative images when exposed and developed. The resist becomes insolubilized by exposure in vacuum.

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High Temperature Negative Electron Beam Resist

Current electron-beam resists have been found to have a tendency to flow under high temperature, causing image loss. Photoresist formulations have been developed, with improved stability, from epoxy-acrylic and melamine-acrylic formulations, which when spin-coated from solutions, and prebaked at 160 Degrees C form negative images when exposed and developed. The resist becomes insolubilized by exposure in vacuum.

The resultant film is developed in a solvent for the polymer leaving the insoluble images on the substrate. The prebake times may be adjusted to regulate speed of exposure. The final image may be post-baked to provide additional heat or etch resistance. Typical formulations are:

2 parts of EPON* 871 to 5 parts of ACRYLOID** AT-70 diluted to 10% with an aromatic solvent (xylene) or a ketone (MIBK).

The ACRYLOID AT-70 has acidic functional groups which react with the epoxide rings of the EPON 871.

When melamine-acrylic, in the ratio of 2 parts of UFORMITE*** MM-46 to 5 parts of ACRYLOID AT-56, is made up to 10% solution in a suitable solvent, the melamine reacts with the hydroxyls of the AT-56 so as to convert the thermoplastic resin to thermoset. * Trademark of Shell Chemical Corp. ** & *** Trademarks of Rohm & Haas Corp.

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